vs-20cth03pbf, vs-20cth03-n3, vs -20CTH03FPPBF, vs-20cth03fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 1 document number: 94010 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 2 x 10 a fred pt ? features ? hyperfast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? fully isolated package (v ins = 2500 v rms ) ? ul e78996 pending ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description/applications 300 v series are the state of the art hyperfast recovery rectifiers designed with opti mized performance of forward voltage drop and hyperfast recovery time. the planar structure and th e platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, ups, dc/dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-220ab, to-220fp i f(av) 2 x 10 a v r 300 v v f at i f 1.25 v t rr typ. see recovery table t j max. 175 c diode variation common cathode to-220ab to-220 full-pak vs-20cth03pbf vs-20CTH03FPPBF vs-20cth03-n3 vs-20cth03fp-n3 anode 1 3 2 base common cathode 2 common cathode anode anode 1 3 2 common cathode anode absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 300 v average rectified forward current per diode i f(av) t c = 160 c 10 a (full-pak) per diode t c = 135 c per device 20 non-repetitive peak surge current i fsm t j = 25 c 120 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 300 - - v forward voltage v f i f = 10 a - 1.05 1.25 i f = 10 a, t j = 125 c - 0.85 0.95 reverse leakage current i r v r = v r rated - - 20 a t j = 125 c, v r = v r rated - 6 200 junction capacitance c t v r = 300 v - 30 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
vs-20cth03pbf, vs-20cth03-n3, vs -20CTH03FPPBF, vs-20cth03fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 2 document number: 94010 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - - 35 ns i f = 1 a, di f /dt = 100 a/s, v r = 30 v - - 30 t j = 25 c i f = 10 a di f /dt = 200 a/s v r = 200 v -31- t j = 125 c - 42 - peak recovery current i rrm t j = 25 c - 2.4 - a t j = 125 c - 5.6 - reverse recovery charge q rr t j = 25 c - 36 - nc t j = 125 c - 120 - thermal - mechanical specifications parameter symbol test condtio ns min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per diode r thjc mounting surface, flat, smooth and greased --1.5 c/w (full-pak) per diode - - 3.9 marking device case style to-220ab 20cth03 case style to-220 full-pak 20cth03fp 1 10 100 0.4 0.6 2 1.4 1 1.8 v f - forward voltage drop (v) i f - instantaneous forward current (a) 1.6 1.2 0.8 t j = 175 c t j = 125 c t j = 25 c 0.01 0.1 1 10 100 50 100 200 250 300 0.001 v r - reverse voltage (v) i r - reverse current (ma) 150 t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c t j = 50 c t j = 75 c
vs-20cth03pbf, vs-20cth03-n3, vs -20CTH03FPPBF, vs-20cth03fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 3 document number: 94010 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum thermal impedance z thjc characteristics (full-pak) 100 1000 0 100 200 250 300 10 v r - reverse voltage (v) c t - junction capacitance (pf) 150 50 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 10 1 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 10 1
vs-20cth03pbf, vs-20cth03-n3, vs -20CTH03FPPBF, vs-20cth03fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 4 document number: 94010 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 6 - maximum allowable case temperature vs. average forward current fig. 7 - maximum allowable case temperature vs. average forward current (full-pak) fig. 8 - forward power loss characteristics fig. 9 - typical reverse recovery time vs. di f /dt fig. 10 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 8); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r see note (1) square wave (d = 0.50) rated v r applied dc 02468 16 14 12 10 180 170 160 150 140 i f(av) - average forward current (a) allowable case temperature (c) see note (1) square wave (d = 0.50) rated v r applied dc 02468 16 14 12 10 180 170 160 150 100 i f(av) - average forward current (a) allowable case temperature (c) 140 130 120 110 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 02468 16 14 12 10 20 16 12 8 0 i f(av) - average forward current (a) average power loss (w) 4 rms limit dc 10 100 1000 t rr (ns) di f /dt (a/s) 100 v r = 200 v i f = 10 a t j = 125 c t j = 25 c 1000 10 100 1000 q rr (nc) di f /dt (a/s) 100 v r = 200 v i f = 10 a t j = 125 c t j = 25 c
vs-20cth03pbf, vs-20cth03-n3, vs -20CTH03FPPBF, vs-20cth03fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 5 document number: 94010 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - reverse recovery parameter test circuit fig. 12 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-20cth03pbf, vs-20cth03-n3, vs -20CTH03FPPBF, vs-20cth03fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 6 document number: 94010 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-20cth03pbf 50 1000 antistatic plastic tube vs-20cth03-n3 50 1000 antistatic plastic tube vs-20CTH03FPPBF 50 1000 antistatic plastic tube vs-20cth03fp-n3 50 1000 antistatic plastic tube links to related documents dimensions to-220ab www.vishay.com/doc?95222 to-220fp www.vishay.com/doc?95072 part marking information to-220abpbf www.vishay.com/doc?95225 to-220ab-n3 www.vishay.com/doc?95028 to-220fppbf www.vishay.com/doc?95069 to-220fp-n3 www.vishay.com/doc?95456 1 - vishay semiconductors product 2 - current rating (20 = 20 a) 3 - c = common cathode 4 - t = to-220, d 2 pak 5 - h = hyperfast recovery 6 - voltage rating (03 = 300 v) 7 - none = to-220ab fp = to-220 full-pak 8 device code 5 1 3 2 4 6 7 8 vs- 20 c t h 03 fp pbf - environmental digit: pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95072 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 5 0.5 0.9 0.7 1.15 1.05 2.54 typ. 2.54 typ. 2.8 2.6 1.4 1.3 typ. 10 16.4 15.4 16.0 15.8 13.56 13.05 0.61 0.38 2.85 2.65 3.7 3.2 4.8 4.6 3.3 3.1 7.31 6.91 10.6 10.4 hole ? 3.4 3.1 (2 places) r 0.7 r 0.5 lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220 full-pak
document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 ? 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
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